منابع مشابه
First-principles study of vacancy-assisted impurity diffusion in ZnO
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متن کاملIdentification of Vacancy-Impurity Complexes in Highly n-Type Si
We show that the detailed atomic structure of vacancy-impurity complexes in Si can be experimentally determined by combining positron lifetime and electron momentum distribution measurements. The vacancies complexed with a single impurity, V -P and V -As, are identified in electron irradiated Si. The formation of native vacancy defects is observed in highly As-doped Si at the doping level of 10...
متن کاملThe Zn-vacancy related green luminescence and donor–acceptor pair emission in ZnO grown by pulsed laser deposition
A low temperature (10 K) photoluminescence study shows that green luminescence (GL) peaking at 2.47 eV and near band edge (NBE) emission at 3.23 eV are introduced in undoped ZnO grown by pulsed laser deposition (PLD) after 900 C annealing. The NBE emission exhibiting blue shift with increasing temperature is assigned to the transitions of the donor–acceptor-pair (DAP)/free-electron-to-acceptor ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2018
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.97.104109